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 PHOTOTRANSISTOR, 5.3 KV, TRIOS(R) LOW CURRENT OPTOCOUPLER
FEATURES * Very High CTR at IF=1 mA, VCE=0.5 V - SFH608-2, 63-125% - SFH608-3, 100-200% - SFH608-4, 160-320% - SFH608-5, 250-500% * Specified Minimum CTR at IF=0.5 mA, VCE=1.5 V: 32% (typ. 120%) * Good CTR Linearity with Forward Current * Low CTR Degradation * High Collector-Emitter Voltage VCEO=55 V * Isolation Test Voltage: 5300 VACRMS * Low Current Input * Low Coupling Capacitance * High Common Mode Transient Immunity * Phototransistor Optocoupler in 6 Pin DIP Package * Field Effect Stable: TRIOS* V * VDE 0884 Available with Option 1 * Underwriters Lab File #E52744 * Applications - Telecommunications - Industrial Controls - Office Machines - Microprocessor System Interfaces
DE
SFH 608
Dimensions in inches (mm)
Pin One ID 3 .248 (6.30) .256 (6.50) 4 5 6 2 1 Anode 1 Cathode 2 NC 3 6 Base 5 Collector 4 Emitter
.335 (8.50) .343 (8.70) .039 (1.00) Min. 4 typ. .018 (0.45) .022 (0.55) .300 (7.62) typ. .130 (3.30) .150 (3.81) 18 typ. .020 (.051) min. .031 (0.80) .035 (0.90) .100 (2.54) typ. .010 (.25) .014 (.35) .300 (7.62) .347 (8.82) .110 (2.79) .150 (3.81)
Maximum Ratings (TA=25C) Emitter Reverse Voltage ...................................................................................6 V DC Forward Current ........................................................................50 mA Surge Forward Current (tp10 s) ................................................... 2.5 A Total Power Dissipation ................................................................. 70 mW Detector Collector-Emitter Voltage .................................................................. 55 V Collector-Base Voltage .......................................................................55 V Emitter-Base Voltage ..........................................................................7 V Collector Current ............................................................................ 50 mA Surge Collector Current (tp1 ms) ................................................100 mA Total Power Dissipation ............................................................... 150 mW Isolation Test Voltage (between emitter and detector, refer to climate DIN 40046 part 2 Nov. 74) (t=1 sec.).............. 5300 VACRMS Creepage ................................................................................................. 7 mm Clearance................................................................................................. 7 mm Comparative Tracking Index per DIN IEC 112/VDE 0303, part1 ................................................... 175 Isolation Resistance VIO=500 V, TA=25C ......................................................................... 1012 VIO=500 V, TA=100C .......................................................................1011 Storage Temperature Range .......................................... -55C to +150C Operating Temperature Range....................................... -55C to +100C Junction Temperature......................................................................100C Soldering Temperature (max. 10 sec., dip soldering: distance to seating plane1.5 mm) .............................................260C
DESCRIPTION The SFH 608 is an optocoupler designed for high current transfer ratio at low input currents with the output transistor saturated. This makes the device ideal for low current switching applications. The SFH608 is packaged in a six pin plastic DIP. *TRIOS--TRansparent IOn Shield
5-1
Characteristics (TA=25C, unless otherwise specified)
Symbol Emitter Forward Voltage Reverse Voltage Reverse Current Capacitance Thermal Resistance Detector Voltage, Collector-Emitter Voltage, Emitter-Base Capacitance Capacitance Capacitance Thermal Resistance Package Coupling Capacitance Coupling Transfer Ratio SFH 608-2 SFH 608-3 SFH 608-4 SFH 608-5 Saturation Voltage, Collector-Emitter SFH 608-2 SFH 608-3 SFH 608-4 SFH 608-5 Leakage Current, Collector-Emitter CC IC/IF IC/IF IC/IF IC/IF 0.60 63-125 75 ( 32) 100-200 120 ( 50) 160-320 200 ( 80) 250-500 300 ( 125) pF % % % % % % % % IF=1 mA, VCE=0.5 V IF=0.5 mA, VCE=1.5 V IF=1 mA, VCE=0.5 V IF=0.5 mA, VCE=1.5 V IF=1 mA, VCE=0.5 V IF=0.5 mA, VCE=1.5 V IF=1 mA, VCE=0.5 V IF=0.5 mA, VCE=1.5 V VCEO VBEO CCE CCB CEB RthJA 55 7 10 16 10 500 V V pF pF pF K/W ICE=10 A IEB=10 A VCE=5 V, f=1 MHz VCE=5 V, f=1 MHz VCE=5 V, f=1 MHz VF VR IR CO RthJA 1.1 ( 1.5) ( 6) 0.01 ( 10) 25 1070 V V A pF K/W IF=5 mA IR= 10 A VR=6 V VR=0 V, f=1 MHz Typ Unit Condition
Figure 2. Switching times TA=25C, IF=1 mA, VCC=5 V, tON, tR, tOFF, tF, =f(RL)
Figure 3. Current transfer ratio (typ.) VCE=0.5 V, CTR=f(TA, IF)
VCEsat VCEsat VCEsat VCEsat ICEO
0.25 ( 0.4) 0.25 ( 0.4) 0.25 ( 0.4) 0.25 ( 0.4) 10 ( 200)
V V V V nA
IC=0.32 mA, IF=1 mA IC= 0.5 mA, IF=1 mA IC= 0.8 mA, IF=1 mA IC=1.25 mA, IF=1 mA VCE=10 V
Figure 1. Schematic IF RL VCC IC
Figure 4. Current transfer ratio (typ.) VCE=1.5 V, CTR=f(TA, IF)
47
IC=2 mA (to adjust by IF), RL=100 , TA=25C, VCC=5 V
Description Turn-On Time Rise Time Turn-Off Time Fall Time Symbol tON tR tOFF tF Values 8 5 7.5 7 Unit s s s s
SFH608
5-2
Figure 5. Diode forward voltage (typ.) TA=25C, VF=f(IF)
Figure 8. Output characteristics (typ.) TA=25C, ICE=f(VCE, IF)
Figure 11. Transistor capacitance (typ.) TA=25C, f=1 MHz, CCE=f(VCE) CCB=f (VCB), CEB=f (VEB)
Figure 6. Diode forward voltage (typ.) IF =1 mA, VF=f(TA)
Figure 9. Permissible forward current diode IF=f(TA)
Figure 12. Collector-emitter leakage current IF=0, VCE=10 V, ICEO=f(TA)
Figure 7. Output characteristics (typ.) TA=25C, ICE=f(VCE, IB)
Figure 10. Permissible power dissipation PTOT=f(TA)
SFH608
5-3


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